Power MOSFET Having Enhanced Breakdown Voltage (US patent, US 6,853,033)

Autoria(s): Liang, Yung C.; Samudra, Ganesh S.; Gan, K.P.; Yang, Xin
Data(s)

01/02/2005
Identificador

http://pure.qub.ac.uk/portal/en/publications/power-mosfet-having-enhanced-breakdown-voltage-us-patent-us-6853033(66117f57-fd7f-4561-b879-466cc5e38363).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Liang , Y C , Samudra , G S , Gan , K P & Yang , X 2005 , Power MOSFET Having Enhanced Breakdown Voltage (US patent, US 6,853,033) , Patent No. US 6,853,033 .
Tipo

patent
Acesso ao item digital