Tunable trench gate power MOSFET: A feasible superjunction device and process technology

Autoria(s): Yang, Xin; Liang, Yung C.; Samudra, Ganesh S.; Liu, Yong
Data(s)

01/11/2004
Identificador

http://pure.qub.ac.uk/portal/en/publications/tunable-trench-gate-power-mosfet-a-feasible-superjunction-device-and-process-technology(2951fcbb-d3da-492c-948e-51b40923e1b0).html

http://www.scopus.com/inward/record.url?scp=20544461904&partnerID=8YFLogxK
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Yang , X , Liang , Y C , Samudra , G S & Liu , Y 2004 , ' Tunable trench gate power MOSFET: A feasible superjunction device and process technology ' Paper presented at 30th Annual Conference of IEEE Industrial Electronics Society (IECON 2004) , Korea, Republic of , 01/11/2004 - 01/11/2004 , pp. 729-733 .
Tipo

conferenceObject
Acesso ao item digital