Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width


Autoria(s): Yang, Xin; Liang, Y.C.; Samudra, G.S.; Liu, Yong
Data(s)

01/11/2003

Identificador

http://pure.qub.ac.uk/portal/en/publications/tunable-oxidebypassed-trench-gate-mosfet-breaking-the-ideal-superjunction-mosfet-performance-line-at-equal-column-width(02e48c1e-2f44-4b68-9568-368f9d59bbcd).html

http://www.scopus.com/inward/record.url?scp=0242662121&partnerID=8YFLogxK

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

Yang , X , Liang , Y C , Samudra , G S & Liu , Y 2003 , ' Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width ' IEEE Electron Device Letters , vol 24 , no. 11 , pp. 704-706 .

Palavras-Chave #/dk/atira/pure/subjectarea/asjc/2200/2208 #Electrical and Electronic Engineering
Tipo

article