The influence of Notches on Domain Dynamics in Ferroelectric Nanowires


Autoria(s): McMillen, Mark; McQuaid, Raymond; Haire, S. C.; McLaughlin, David; Chang, Li-Wu; Schilling, Alina; Gregg, Marty
Data(s)

25/01/2010

Resumo

The extent to which notches inhibit axial switching of polarization in ferroelectric nanowires was investigated by monitoring the switching behavior of single crystal BaTiO(3) wires before and after patterning triangular notches along their lengths. Static zero-field domain patterns suggested a strong domain-notch interaction, implying that notches should act as pinning sites for domain wall propagation. Surprisingly though, notches appeared to assist, rather than inhibit, polar switching. The origin of this effect was rationalized using finite element modeling of the electric field distribution along the notched wire; it was found that the air gap associated with the notch acted to enhance the local field, both in the air, and in the adjacent region of the ferroelectric. It seems that this local field enhancement outweighs any pinning interactions.

Formato

application/pdf

Identificador

http://pure.qub.ac.uk/portal/en/publications/the-influence-of-notches-on-domain-dynamics-in-ferroelectric-nanowires(4cb40a9d-5823-4b5a-9eec-2e331ccea458).html

http://dx.doi.org/10.1063/1.3300638

http://pure.qub.ac.uk/ws/files/6444645/MMcMillen_Schilling_APL96_042904_2010.pdf

http://www.scopus.com/inward/record.url?scp=75749137410&partnerID=8YFLogxK

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

McMillen , M , McQuaid , R , Haire , S C , McLaughlin , D , Chang , L-W , Schilling , A & Gregg , M 2010 , ' The influence of Notches on Domain Dynamics in Ferroelectric Nanowires ' Applied Physics Letters , vol 96 , no. 4 , 042904 , pp. 042904-042904 . DOI: 10.1063/1.3300638

Palavras-Chave #barium compounds; dielectric polarisation; electric domain walls; ferroelectric materials; ferroelectric switching; finite element analysis; nanowires
Tipo

article