Back gate effects in N-channel monocrystalline silicon devices-on-glass and their suppression by boron ion implantation

Autoria(s): Baine, Paul; Mitchell, Neil; Gamble, Harold; Armstrong, Mervyn
Data(s)

01/04/1999
Identificador

http://pure.qub.ac.uk/portal/en/publications/back-gate-effects-in-nchannel-monocrystalline-silicon-devicesonglass-and-their-suppression-by-boron-ion-implantation(83852116-b92d-4cfa-bef6-bca15b9af19a).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Baine , P , Mitchell , N , Gamble , H & Armstrong , M 1999 , ' Back gate effects in N-channel monocrystalline silicon devices-on-glass and their suppression by boron ion implantation ' Paper presented at Symposium on Flat-Panel Displays and Sensors-Principles, Materials and Processes held at the 1999 MRS Spring Meeting , San Francisco , United States , 01/04/2000 - 01/04/2000 , pp. 369-374 .
Tipo

conferenceObject
Acesso ao item digital