The deposition and characterisation of CVD tungsten silicide for applications in microelectronics


Autoria(s): Armstrong, Mervyn; Bain, Michael; Gamble, Harold
Data(s)

01/01/2002

Identificador

http://pure.qub.ac.uk/portal/en/publications/the-deposition-and-characterisation-of-cvd-tungsten-silicide-for-applications-in-microelectronics(ad40c71a-b58d-4448-bae2-9969b0856f47).html

http://www.scopus.com/inward/record.url?scp=0036136188&partnerID=8YFLogxK

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

Armstrong , M , Bain , M & Gamble , H 2002 , ' The deposition and characterisation of CVD tungsten silicide for applications in microelectronics ' Vacuum , vol 64(3-4) , no. 3-4 , pp. 227-232 .

Palavras-Chave #/dk/atira/pure/subjectarea/asjc/2500/2508 #Surfaces, Coatings and Films #/dk/atira/pure/subjectarea/asjc/3100/3104 #Condensed Matter Physics #/dk/atira/pure/subjectarea/asjc/3100/3110 #Surfaces and Interfaces
Tipo

article