High-k ZrO2 gate dielectric on strained-Si

Autoria(s): Armstrong, Mervyn; Gamble, Harold
Data(s)

01/12/2003
Identificador

http://pure.qub.ac.uk/portal/en/publications/highk-zro2-gate-dielectric-on-strainedsi(0a527b3b-e6b8-4714-bbb5-8a05cab1d514).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M & Gamble , H 2003 , ' High-k ZrO2 gate dielectric on strained-Si ' Paper presented at Fundamentals of Novel Oxide/Semiconductor Interfaces Symp (Mater. Res. Soc. Symp Proceedings Vol.786) pp 159-164, 2004 , Boston , United States , 01/12/2003 - 01/12/2003 , pp. 259-164 .
Tipo

conferenceObject
Acesso ao item digital