Effect of deposition temperature on the formation of CoSi2 through the rapid thermal annealing of CVD cobalt
| Data(s) |
01/10/2004
|
|---|---|
| Identificador |
http://www.scopus.com/inward/record.url?scp=4544261205&partnerID=8YFLogxK |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Armstrong , M , Bain , M & Gamble , H 2004 , ' Effect of deposition temperature on the formation of CoSi2 through the rapid thermal annealing of CVD cobalt ' Microelectronic Engineering , vol 76(1-4) , no. 1-4 , pp. 336-342 . |
| Palavras-Chave | #/dk/atira/pure/subjectarea/asjc/1700/1708 #Hardware and Architecture #/dk/atira/pure/subjectarea/asjc/2200/2208 #Electrical and Electronic Engineering #/dk/atira/pure/subjectarea/asjc/2500/2504 #Electronic, Optical and Magnetic Materials #/dk/atira/pure/subjectarea/asjc/2500/2508 #Surfaces, Coatings and Films #/dk/atira/pure/subjectarea/asjc/3100/3107 #Atomic and Molecular Physics, and Optics |
| Tipo |
article |
