Novel low temperature techniques for growth of ultrathin oxides for strained Si MOS devices

Autoria(s): Armstrong, Mervyn; Gamble, Harold
Data(s)

01/12/2007
Identificador

http://pure.qub.ac.uk/portal/en/publications/novel-low-temperature-techniques-for-growth-of-ultrathin-oxides-for-strained-si-mos-devices(9a2b71a7-69a6-47ff-aac4-9ec53b9c7626).html

http://www.scopus.com/inward/record.url?scp=51849158756&partnerID=8YFLogxK
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M & Gamble , H 2007 , ' Novel low temperature techniques for growth of ultrathin oxides for strained Si MOS devices ' Paper presented at Proc International Conference on Microelectronics pp429-32 , Cairo , Egypt , 01/12/2007 - 01/12/2007 , pp. 429-432 .
Tipo

conferenceObject
Acesso ao item digital