Device design considerations for nanoscale double and triple gate FinFETs

Autoria(s): Kranti, Abhinav; Armstrong, Alastair
Data(s)

01/10/2005
Identificador

http://pure.qub.ac.uk/portal/en/publications/device-design-considerations-for-nanoscale-double-and-triple-gate-finfets(22a55e87-8dd6-43f2-93b4-f46eafc511e0).html

http://www.scopus.com/inward/record.url?scp=33744723744&partnerID=8YFLogxK
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Kranti , A & Armstrong , A 2005 , ' Device design considerations for nanoscale double and triple gate FinFETs ' Paper presented at IEEE International SOI Conference , Honolulu, Hi , United States , 01/10/2005 - 01/10/2005 , pp. 96-98 .
Tipo

conferenceObject
Acesso ao item digital