Dependence of the interfacial capacitance on measurement regime used for investigation of thin film ferroelectric capacitors
| Data(s) |
01/01/2003
|
|---|---|
| Identificador |
http://dx.doi.org/10.1063/1.1522476 http://www.scopus.com/inward/record.url?scp=0037246548&partnerID=8YFLogxK |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Sinnamon , L J , McAneney , J , Bowman , R & Gregg , M 2003 , ' Dependence of the interfacial capacitance on measurement regime used for investigation of thin film ferroelectric capacitors ' Journal of Applied Physics , vol 93 , no. 1 , pp. 736-744 . DOI: 10.1063/1.1522476 |
| Palavras-Chave | #/dk/atira/pure/subjectarea/asjc/3100 #Physics and Astronomy(all) #/dk/atira/pure/subjectarea/asjc/3100/3101 #Physics and Astronomy (miscellaneous) |
| Tipo |
article |
