Monte Carlo simulation of cluster growth in surface defects induced by the tip of a scanning tunnelling microscope
Data(s) |
01/11/2004
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Resumo |
First steps are taken to model the electrochemical deposition of metals in nanometer-sized cavities. In the present work, the electrochemical deposition of Cu atoms in nanometer-sized holes dug on Au(111) is investigated through Monte Carlo simulations using the embedded atom method to represent particle interactions. By sweeping the chemical potential of Cu, a cluster is allowed to grow within the hole rising four atomic layers above the surface. Its lateral extension remains confined to the area defined by the borders of the original defect. (C) 2004 Elsevier B.V. All rights reserved. |
Identificador |
http://dx.doi.org/10.1016/j.susc.2004.08.013 http://www.scopus.com/inward/record.url?scp=6444239464&partnerID=8YFLogxK |
Idioma(s) |
eng |
Direitos |
info:eu-repo/semantics/restrictedAccess |
Fonte |
Luque , N B , Del Popolo , M & Leiva , E P M 2004 , ' Monte Carlo simulation of cluster growth in surface defects induced by the tip of a scanning tunnelling microscope ' Surface Science , vol 571 , no. 1-3 , pp. L319-L324 . DOI: 10.1016/j.susc.2004.08.013 |
Palavras-Chave | #/dk/atira/pure/subjectarea/asjc/1600/1606 #Physical and Theoretical Chemistry #/dk/atira/pure/subjectarea/asjc/3100/3104 #Condensed Matter Physics #/dk/atira/pure/subjectarea/asjc/3100/3110 #Surfaces and Interfaces |
Tipo |
article |