Bandstructure approach to near edge structure


Autoria(s): Paxton, Anthony; Gregg, Marty; Craven, A.J.; McComb, D.
Data(s)

01/04/2003

Resumo

We review the current state of the art in EELS fingerprinting by computer simulation, focusing on the bandstructure approach to the problem. Currently calculations are made using a one electron theory, but we describe in principle the way to go beyond this to include final state effects. We include these effects within the one electron framework using the Slater transition state formula and assess the errors involved. Two examples are then given which illustrate the use of the one electron approximation within density functional theory. Our approach is to combine predicted atomic structure with predicted electronic structure to assist in fingerprinting of complex crystal structures.

Identificador

http://pure.qub.ac.uk/portal/en/publications/bandstructure-approach-to-near-edge-structure(a215860c-d9db-468f-b8bd-968a8ecd67b1).html

http://dx.doi.org/10.1046/j.1365-2818.2003.01182.x

http://www.scopus.com/inward/record.url?scp=0037395731&partnerID=8YFLogxK

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

Paxton , A , Gregg , M , Craven , A J & McComb , D 2003 , ' Bandstructure approach to near edge structure ' Journal of Microscopy , vol 210 , no. 1 , pp. 35-44 . DOI: 10.1046/j.1365-2818.2003.01182.x

Palavras-Chave #/dk/atira/pure/subjectarea/asjc/3100/3105 #Instrumentation
Tipo

article