Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor
| Data(s) |
01/07/2005
|
|---|---|
| Identificador |
http://dx.doi.org/10.1007/s10854-005-2311-7 http://www.scopus.com/inward/record.url?scp=24944576540&partnerID=8YFLogxK |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Toh , B H W , McNeill , D & Gamble , H 2005 , ' Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor ' Journal of Materials Science: Materials in Electronics , vol 16(7) , no. 7 , pp. 437-443 . DOI: 10.1007/s10854-005-2311-7 |
| Palavras-Chave | #/dk/atira/pure/subjectarea/asjc/2200/2208 #Electrical and Electronic Engineering #/dk/atira/pure/subjectarea/asjc/2500 #Materials Science(all) #/dk/atira/pure/subjectarea/asjc/2500/2504 #Electronic, Optical and Magnetic Materials #/dk/atira/pure/subjectarea/asjc/3100/3104 #Condensed Matter Physics |
| Tipo |
article |
