Modification of GaAs Schottky diodes by thin organic interlayers
| Contribuinte(s) |
Department of Computer Science Institute of Mathematics & Physics (ADT) |
|---|---|
| Data(s) |
05/09/2007
05/09/2007
10/02/2005
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| Resumo |
Modification of GaAs Schottky diodes by thin organic interlayers, A.R. Vearey-Roberts and D.A. Evans, Appl. Phys. Lett. 86, 072105 (2005) Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The I-V characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n Peer reviewed |
| Identificador |
Evans , A & Vearey-Roberts , A R 2005 , ' Modification of GaAs Schottky diodes by thin organic interlayers ' Applied Physics Letters , vol 86 , no. 7 . DOI: 10.1063/1.1864255 1077-3118 PURE: 72349 PURE UUID: 30e7cc9f-6291-4188-b56f-4c0fdca4aba2 dspace: 2160/329 |
| Idioma(s) |
eng |
| Relação |
Applied Physics Letters |
| Tipo |
/dk/atira/pure/researchoutput/researchoutputtypes/contributiontojournal/article |
| Direitos |
