Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry
| Data(s) |
1999
|
|---|---|
| Resumo |
An experimental setup and the procedure for the laser resonant ionization mass spectrometry (RIMS) have been described. Both an optical spectrum and a mass spectum have been shown. The detection limit that can be reached by using this procedure has been estimated. |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
Peng WX;Jiang ZK;Guo C;Qiu BC.Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry,SPECTROSCOPY AND SPECTRAL ANALYSIS,1999,19(1):16-18 |
| Palavras-Chave | #LASER-ABLATION |
| Tipo |
期刊论文 |
