Anisotropic characteristics of a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by MOCVD

Autoria(s): Tingting Jia; Shengming Zhou; Hao Teng; Hui Lin; Jun Wang; Jianqi Liu; Yongxin Qiu; Jun Huang; Kai Huang; Feng Bao; Ke Xu
Data(s)

2010
Identificador

http://ir.siom.ac.cn/handle/181231/7056

http://www.irgrid.ac.cn/handle/1471x/135549
Idioma(s)

中文
Fonte

Tingting Jia,Shengming Zhou,Hao Teng,Hui Lin,Jun Wang,Jianqi Liu,Yongxin Qiu,Jun Huang,Kai Huang,Feng Bao,Ke Xu, .Anisotropic characteristics of a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by MOCVD.Applied Surface Science,2010,4(257):1181-1184
Tipo

期刊论文
Acesso ao item digital