Study of the interaction of highly charged ions with SiO2 surface
| Data(s) |
2009
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|---|---|
| Resumo |
Highly charged ions (HCIs) AO(q+)/Pbq+ are extracted from ECR source and impacted on solid surface Of SiO2 Sputtering yield as a function of incident angle is measured by multi-channel plate (MCP). The results have been fitted by a new formula. We proposed the cooperation model to explain the formula. The results demonstrate that the potential assisted kinetic sputtering yield increases with the charge state and potential sputtering (PS) could be induced by impact of HCIs. At larger incident angles, the sputtering yield is dominated by elastic collision between HCIs and material atoms. It is found that, smaller the incident angle, larger the contribution from the potential sputtering. (C) 2009 Elsevier B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Peng, HB (Peng, H. B.); Cheng, R (Cheng, R.); Yang, XY (Yang, X. Y.); Han, YC (Han, Y. C.); Zhao, YT (Zhao, Y. T.); Yang, J (Yang, J.); Wang, SW (Wang, S. W.); Fang, Y (Fang, Y.); Wang, TS (Wang, T. S.).Study of the interaction of highly charged ions with SiO2 surface ,SURFACE & COATINGS TECHNOLOGY ,2009,203(17-18 ):2387-2389 |
| Palavras-Chave | #Highly charged ions (HCIs) #Sputtering yield #Sputtering |
| Tipo |
期刊论文 |
