热退火对分子束外延生长的高纯GaAs薄膜中深能级的影响
| Data(s) |
1989
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|---|---|
| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:17:08导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:17:09Z (GMT). No. of bitstreams: 1 6431.pdf: 1327614 bytes, checksum: 9e43f5252fe3a6237d809b9cc0af422c (MD5) Previous issue date: 1989 中科院半导体所;Chalmers University of Technology |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
徐鸿达;Andersson T G.热退火对分子束外延生长的高纯GaAs薄膜中深能级的影响,半导体学报,1989,10(12):912 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
