两性杂质锗在LPE GaAs中分凝系数和占位比的计算
| Data(s) |
1989
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|---|---|
| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:17:00导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:17:01Z (GMT). No. of bitstreams: 1 6415.pdf: 207967 bytes, checksum: f4b1489acae69f1e04f3fc8c9c755089 (MD5) Previous issue date: 1989 中科院半导体所 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
杨辉;梁骏吾.两性杂质锗在LPE GaAs中分凝系数和占位比的计算,半导体学报,1989,10(10):725 |
| Palavras-Chave | #半导体物理 |
| Tipo |
期刊论文 |
