采用离子注入方法调整和控制氢离子敏场效应管(PH-ISFET)阈值电压


Autoria(s): 汪正孝
Data(s)

1989

Resumo

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中科院半导体所

Identificador

http://ir.semi.ac.cn/handle/172111/20563

http://www.irgrid.ac.cn/handle/1471x/104919

Idioma(s)

中文

Fonte

汪正孝.采用离子注入方法调整和控制氢离子敏场效应管(PH-ISFET)阈值电压,半导体学报,1989,10(1):62

Palavras-Chave #半导体物理
Tipo

期刊论文