GaAs-AlxGa(1-x)As异质结构界面光激发过剩电子的热辅助隧穿俘获


Autoria(s): 何礼熊
Data(s)

1995

Resumo

于2010-11-23批量导入

zhangdi于2010-11-23 13:14:10导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-23T05:14:10Z (GMT). No. of bitstreams: 1 6005.pdf: 228058 bytes, checksum: eac76c263d74cacab564033390e09492 (MD5) Previous issue date: 1995

中科院半导体所

Identificador

http://ir.semi.ac.cn/handle/172111/19811

http://www.irgrid.ac.cn/handle/1471x/104543

Idioma(s)

中文

Fonte

何礼熊.GaAs-AlxGa(1-x)As异质结构界面光激发过剩电子的热辅助隧穿俘获,半导体学报,1995,16(4):253

Palavras-Chave #光电子学
Tipo

期刊论文