Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT

Autoria(s): 张兴宏; 杨玉芬; 王占国
Data(s)

1997
Identificador

http://ir.semi.ac.cn/handle/172111/19475

http://www.irgrid.ac.cn/handle/1471x/104375
Idioma(s)

中文
Fonte

张兴宏;杨玉芬;王占国.Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT,半导体学报,1997,18(8):636
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital