LP-MOVPE生长的1.3μmInGaAsP/InP张压应变交替MQW特性
| Data(s) |
1997
|
|---|---|
| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:12:47导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:12:47Z (GMT). No. of bitstreams: 1 5803.pdf: 284804 bytes, checksum: 762c4a72a2dbcdecd43b4d1c11580007 (MD5) Previous issue date: 1997 中科院半导体所 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
王志杰;陈博;王圩;张济志;朱洪亮;周帆;金才政;马朝华;王启明.LP-MOVPE生长的1.3μmInGaAsP/InP张压应变交替MQW特性,半导体学报,1997,18(3):232 |
| Palavras-Chave | #半导体器件 |
| Tipo |
期刊论文 |
