优质应变Si_(1-x)Ge_x/Si超晶格的气源分子束处延
| Data(s) |
1997
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|---|---|
| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:12:43导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:12:43Z (GMT). No. of bitstreams: 1 5789.pdf: 150256 bytes, checksum: d1c12d101a0a9b19516fefc6371aa2de (MD5) Previous issue date: 1997 中科院半导体所 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
Zou L F;Wang Z G;Sun D Z;Liu X F;Zhang J W;Li J P;Kong M Y;Lin L Y.优质应变Si_(1-x)Ge_x/Si超晶格的气源分子束处延,电子显微学报,1997,16(4):395 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
