Comparison of GexSi1—x Grown by UHV/CVD from Si2H6/GeH4 and SiH4/GeH4


Autoria(s): 李代宗; 于卓; 成步文; 黄昌俊; 雷震霖; 余金中; 王启明
Data(s)

1999

Resumo

国家自然科学基金

Identificador

http://ir.semi.ac.cn/handle/172111/19039

http://www.irgrid.ac.cn/handle/1471x/104157

Idioma(s)

英语

Fonte

李代宗;于卓;成步文;黄昌俊;雷震霖;余金中;王启明.Comparison of GexSi1—x Grown by UHV/CVD from Si2H6/GeH4 and SiH4/GeH4,Semiconductor Photonics and Technology,1999,5(3):134

Palavras-Chave #光电子学
Tipo

期刊论文