N型6H-SiCMOS电容的电学特性
| Data(s) |
2001
|
|---|---|
| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:10:28导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:10:28Z (GMT). No. of bitstreams: 1 5384.pdf: 217096 bytes, checksum: aa0a5dc2f100b3e50c05c63825118034 (MD5) Previous issue date: 2001 中科院半导体所 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
王姝睿;刘忠立;梁桂荣;梁秀芹;马红芝.N型6H-SiCMOS电容的电学特性,半导体学报,2001,22(6):755-759 |
| Palavras-Chave | #微电子学 |
| Tipo |
期刊论文 |
