In_（0.49）Ga_（0.51）P中缺陷的俘获行为
| Data(s) |
1999
|
|---|---|
| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:10:01导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:10:01Z (GMT). No. of bitstreams: 1 5318.pdf: 201618 bytes, checksum: e58004e3f742fe266888ce7590e33691 (MD5) Previous issue date: 1999 中科院半导体所 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
王海龙;封松林.In_（0.49）Ga_（0.51）P中缺陷的俘获行为,发光学报,1999,20(1):17 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
