Co—Design of Monolithically Integrated Photo—Detectorand Optical—Receiver

A behavioral model of the photodiode is presented．The model describes the relationship between photocurrent and incident optical power，and it also illustrates the impact of the reverse bias to the variation of the junction capacitance．According to this model，the photodiode and a CMOS receiver circuit are simulated and designed simultaneously under a universal circuit simulation environment．

A behavioral model of the photodiode is presented．The model describes the relationship between photocurrent and incident optical power，and it also illustrates the impact of the reverse bias to the variation of the junction capacitance．According to this model，the photodiode and a CMOS receiver circuit are simulated and designed simultaneously under a universal circuit simulation environment．

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国家高技术研究发展计划资助项目(Nos．2 lAA312 8 ，2 1AAl22 32，2 2AA31224 )

Institute of Semiconductors, The Chinese Academy of Sciences;School of Electronic InformationEngineering, Tianjin University

国家高技术研究发展计划资助项目(Nos．2 lAA312 8 ，2 1AAl22 32，2 2AA31224 )