PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM ZNSE-TE-(CDSE)(1) (ZNSE)(3) SUPERLATTICE QUANTUM-WELLS


Autoria(s): HAN HX; LIU ZX; WANG ZP; ZHANG JQ; PENG ZL; YUAN SX
Data(s)

1995

Resumo

Pressure dependence of photoluminescence from ZnSe:Te-(CdSe)(1)(ZnSe)(3) short period superlattice quantum wells is reported. In addition to the exciton band from the superlattice layers, strong bands for localized excitons self-trapped al single Te (Te-1) atom, double Te atoms (Te-2) and Te clusters (Te-n, n greater than or equal to 3) as well as for the free excitons in isoelectronic Te incorporated ZnSe layers are observed. Significant differences in the pressure and temperature dependencies of the observed exciton transitions are presented and discussed.

Identificador

http://ir.semi.ac.cn/handle/172111/15575

http://www.irgrid.ac.cn/handle/1471x/101826

Idioma(s)

英语

Fonte

HAN HX; LIU ZX; WANG ZP; ZHANG JQ; PENG ZL; YUAN SX .PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM ZNSE-TE-(CDSE)(1) (ZNSE)(3) SUPERLATTICE QUANTUM-WELLS ,JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,1995,56(0):389-391

Palavras-Chave #半导体化学 #QUANTUM WELLS #HIGH PRESSURE #LUMINESCENCE #ZNSE1-XTEX
Tipo

期刊论文