THE CHARACTERISTICS OF OXIDATION OF POLYCRYSTALLINE SILICON FILMS IN VLSI


Autoria(s): WANG YY; ZHANG AZ
Data(s)

1984

Identificador

http://ir.semi.ac.cn/handle/172111/14771

http://www.irgrid.ac.cn/handle/1471x/101420

Idioma(s)

英语

Fonte

WANG YY; ZHANG AZ.THE CHARACTERISTICS OF OXIDATION OF POLYCRYSTALLINE SILICON FILMS IN VLSI,PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS,1984,463(0):139-145

Palavras-Chave #光电子学
Tipo

期刊论文