THE CONVERGENT EFFECT OF THE ANNEALING TEMPERATURES OF ELECTRON-IRRADIATED DEFECTS IN FZ SILICON GROWN IN HYDROGEN
| Data(s) |
1985
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
QIN GG; HUA ZL.THE CONVERGENT EFFECT OF THE ANNEALING TEMPERATURES OF ELECTRON-IRRADIATED DEFECTS IN FZ SILICON GROWN IN HYDROGEN,SOLID STATE COMMUNICATIONS ,1985,53(11):975-978 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
