POSITRON-ANNIHILATION STUDY OF VACANCY DEFECTS IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
| Data(s) |
1987
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
TU XZ.POSITRON-ANNIHILATION STUDY OF VACANCY DEFECTS IN GAAS LIQUID-PHASE EPITAXIAL LAYERS,JOURNAL OF APPLIED PHYSICS,1987,62(6):2585-2586 |
| Palavras-Chave | #半导体物理 |
| Tipo |
期刊论文 |
