HREM EXAMINATION OF ER ION-IMPLANTED IN SI

Autoria(s): YAN Y; LI Q; FENG D; WANG P; SUN HL
Data(s)

1989
Identificador

http://ir.semi.ac.cn/handle/172111/14507

http://www.irgrid.ac.cn/handle/1471x/101288
Idioma(s)

英语
Fonte

YAN Y; LI Q; FENG D; WANG P; SUN HL.HREM EXAMINATION OF ER ION-IMPLANTED IN SI,MATERIALS LETTERS,1989,7(12):445-448
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital