A NOVEL MODEL OF NEW DONORS IN CZOCHRALSKI-GROWN SILICON

Autoria(s): QIAN JJ; WANG ZG; WAN SK; LIN LY
Data(s)

1990
Identificador

http://ir.semi.ac.cn/handle/172111/14383

http://www.irgrid.ac.cn/handle/1471x/101226
Idioma(s)

英语
Fonte

QIAN JJ; WANG ZG; WAN SK; LIN LY.A NOVEL MODEL OF NEW DONORS IN CZOCHRALSKI-GROWN SILICON,JOURNAL OF APPLIED PHYSICS,1990,68(3):954-957
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital