RAMAN-SCATTERING BY LO PHONONS IN (GAAS)N1/(ALAS)N2 ULTRATHIN-LAYER SUPERLATTICES


Autoria(s): WANG ZP; HAN HX; LI GH; JIANG DS; PLOOG K
Data(s)

1991

Resumo

Raman spectra of (GaAs)n1/(AlAs)n2 ultrathin-layer superlattices were measured at room temperature and under off-resonance conditions. The experimental results show that there are two effects in ultrathin-layer superlattices: the confinement effect of LO phonons and the alloy effect. It is found that the relative intensity of the disorder-activated TO mode can give a measure of the alloy effect. The Raman spectra of one-monolayer superlattices measured in various scattering configurations are very similar to those of the Al0.5Ga0.5As alloy, and thus the alloy effect is prominent. However, in the case of monolayer number n greater-than-or-equal-to 4, the confined effect is prominent, while the alloy effect is only shown as an interface effect.

Identificador

http://ir.semi.ac.cn/handle/172111/14311

http://www.irgrid.ac.cn/handle/1471x/101190

Idioma(s)

英语

Fonte

WANG ZP; HAN HX; LI GH; JIANG DS; PLOOG K.RAMAN-SCATTERING BY LO PHONONS IN (GAAS)N1/(ALAS)N2 ULTRATHIN-LAYER SUPERLATTICES,PHYSICAL REVIEW B,1991,43(15):12650-12653

Palavras-Chave #半导体物理 #SHORT-PERIOD SUPERLATTICES
Tipo

期刊论文