PHOTOREFLECTANCE SPECTROSCOPY OF SEMIINSULATING GAAS


Autoria(s): WANG RZ; JIANG DS
Data(s)

1992

Resumo

Clear observations of photoreflectance (PR) spectra due to excitonic transitions in semi-insulating GaAs bulk materials are reported. The modulation mechanism is attributed to the electromodulation induced by the Dember effect. This study indicates that the PR spectroscopy provides an important method for characterizing the crystal quality of high-resistivity GaAs.

Identificador

http://ir.semi.ac.cn/handle/172111/14165

http://www.irgrid.ac.cn/handle/1471x/101117

Idioma(s)

英语

Fonte

WANG RZ; JIANG DS.PHOTOREFLECTANCE SPECTROSCOPY OF SEMIINSULATING GAAS,JOURNAL OF APPLIED PHYSICS,1992,72(8):3826-3828

Palavras-Chave #半导体物理 #MODULATION SPECTROSCOPY #ELECTROREFLECTANCE #SEMICONDUCTORS #TEMPERATURE #CHARGE #LEVEL
Tipo

期刊论文