Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots


Autoria(s): Gu YX (Gu Yong-Xian); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Xu PF (Xu Peng-Fei); Wang ZG (Wang Zhan-Guo)
Data(s)

2010

Resumo

We present a systematic investigation of calculating quantum dots (QDs) energy levels using finite element method in the frame of eight-band k . p method. Numerical results including piezoelectricity, electron and hole levels, as yell as wave functions are achieved. In the calculation of energy levels, we do observe spurious solutions (SSs) no matter Burt-Foreman or symmetrized Hamiltonians are used. Different theories are used to analyse the SSs, we find that the ellipticity theory can give a better explanation for the origin of SSs and symmetrized Hamiltonian is easier to lead to SSs. The energy levels simulated with the two Hamiltonians are compared to each other after eliminating SSs, different Hamiltonians cause a larger difference on electron energy levels than that on hole energy levels and this difference decreases with the increase of QD size.

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其它

Identificador

http://ir.semi.ac.cn/handle/172111/13509

http://www.irgrid.ac.cn/handle/1471x/66257

Idioma(s)

英语

Fonte

Gu YX (Gu Yong-Xian), Yang T (Yang Tao), Ji HM (Ji Hai-Ming), Xu PF (Xu Peng-Fei), Wang ZG (Wang Zhan-Guo).Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots.CHINESE PHYSICS B,2010,19(8):Art. No. 088102

Palavras-Chave #半导体材料 #quantum dot #symmetrized Hamiltonian #Burt-Foreman Hamiltonian #finite element method #spurious solutions #EFFECTIVE-MASS APPROXIMATION #P THEORY
Tipo

期刊论文