MOCVD设备研制及氮化物材料生长研究
Contribuinte(s) |
王晓亮 |
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Data(s) |
2010
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Resumo |
Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-08T13:11:28Z No. of bitstreams: 1 MOCVD设备研制及氮化物材料生长研究—殷海波-200718013626085.pdf: 3776668 bytes, checksum: efab1d75bd6d03744fd23a7a554f17e7 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-06-08T13:20:17Z (GMT) No. of bitstreams: 1 MOCVD设备研制及氮化物材料生长研究—殷海波-200718013626085.pdf: 3776668 bytes, checksum: efab1d75bd6d03744fd23a7a554f17e7 (MD5) Made available in DSpace on 2010-06-08T13:20:17Z (GMT). No. of bitstreams: 1 MOCVD设备研制及氮化物材料生长研究—殷海波-200718013626085.pdf: 3776668 bytes, checksum: efab1d75bd6d03744fd23a7a554f17e7 (MD5) Previous issue date: 2010 |
Identificador | |
Idioma(s) |
中文 |
Fonte |
殷海波.MOCVD设备研制及氮化物材料生长研究[博士].北京.中国科学院研究生院.2010 |
Palavras-Chave | #半导体材料 |
Tipo |
学位论文 |