MOCVD设备研制及氮化物材料生长研究


Autoria(s): 殷海波
Contribuinte(s)

王晓亮

Data(s)

2010

Resumo

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-08T13:11:28Z No. of bitstreams: 1 MOCVD设备研制及氮化物材料生长研究—殷海波-200718013626085.pdf: 3776668 bytes, checksum: efab1d75bd6d03744fd23a7a554f17e7 (MD5)

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Made available in DSpace on 2010-06-08T13:20:17Z (GMT). No. of bitstreams: 1 MOCVD设备研制及氮化物材料生长研究—殷海波-200718013626085.pdf: 3776668 bytes, checksum: efab1d75bd6d03744fd23a7a554f17e7 (MD5) Previous issue date: 2010

Identificador

http://ir.semi.ac.cn/handle/172111/11319

http://www.irgrid.ac.cn/handle/1471x/66127

Idioma(s)

中文

Fonte

殷海波.MOCVD设备研制及氮化物材料生长研究[博士].北京.中国科学院研究生院.2010

Palavras-Chave #半导体材料
Tipo

学位论文