InGaN基发光二极管的反常特性研究
Contribuinte(s) |
曾一平 |
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Data(s) |
2010
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Resumo |
Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-02T02:11:24Z No. of bitstreams: 1 丁凯博士学位论文.pdf: 16795233 bytes, checksum: 311ac7bbd9c83be13609a0a0f4b36268 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-06-02T02:11:34Z (GMT) No. of bitstreams: 1 丁凯博士学位论文.pdf: 16795233 bytes, checksum: 311ac7bbd9c83be13609a0a0f4b36268 (MD5) Made available in DSpace on 2010-06-02T02:11:34Z (GMT). No. of bitstreams: 1 丁凯博士学位论文.pdf: 16795233 bytes, checksum: 311ac7bbd9c83be13609a0a0f4b36268 (MD5) Previous issue date: 2010 |
Identificador | |
Idioma(s) |
中文 |
Fonte |
丁凯.InGaN基发光二极管的反常特性研究[博士].北京.中国科学院研究生院.2010 |
Palavras-Chave | #半导体材料 |
Tipo |
学位论文 |