SHicon-based resonant-cavity-enhanced photodetectors
| Data(s) |
2006
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|---|---|
| Resumo |
Silicon-based resonant-cavity-enhanced photodetectors (RCE-PD) with Si, Ge islands and InGaAs as absorption materials were introduced, respectively. The Ge islands and Si RCE-PD had a membrane structure and the Si-based InGaAs RCE-PDs were fabricated by bonding technology. Silicon-based resonant-cavity-enhanced photodetectors (RCE-PD) with Si, Ge islands and InGaAs as absorption materials were introduced, respectively. The Ge islands and Si RCE-PD had a membrane structure and the Si-based InGaAs RCE-PDs were fabricated by bonding technology. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 IEEE. Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China IEEE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Cheng, BW (Cheng, Buwen); Li, CB (Li, Chuanbo); Mao, RW (Mao, Rongwei); Yao, F (Yao, Fei); Xue, CL (Xue, Chunlai); Zhang, JG (Zhang, Jianguo); Shi, WH (Shi, Wenhua); Zuo, YH (Zuo, Yuhua); Yu, JZ (Yu, Jinzhong); Wang, QM (Wang, Qiming) .SHicon-based resonant-cavity-enhanced photodetectors .见：IEEE .2006 3rd IEEE International Conference on Group IV Photonics,345 E 47TH ST, NEW YORK, NY 10017 USA ,2006,182-184 |
| Palavras-Chave | #光电子学 #HIGH-SPEED |
| Tipo |
会议论文 |
