GaP中N和N和Ni对束缚激子压力行为的研究


Autoria(s): 杨桂林; 王炳森; 赵学恕; 李国华
Data(s)

1986

Resumo

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Made available in DSpace on 2010-04-13T00:43:32Z (GMT). No. of bitstreams: 0 Previous issue date: 1986

Identificador

http://ir.semi.ac.cn/handle/172111/10936

http://www.irgrid.ac.cn/handle/1471x/65648

Idioma(s)

中文

Fonte

杨桂林;王炳森;赵学恕;李国华.GaP中N和N和Ni对束缚激子压力行为的研究 .1986

Palavras-Chave #半导体器件 #GaP
Tipo

成果