Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113)
| Data(s) |
1999
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|---|---|
| Resumo |
Morphology of self-assembled GeSi quantum dot grown on Si(113) by Si molecular beam epitaxy has been studied by transmission electron microscopy and atomic force microscopy. Photoluminescence from the as-grown sample and annealed sample was studied. The results were analyzed and explained. |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
Si JJ; Yang QQ; Teng D; Wang HJ; Yu JZ; Wang QM; Guo LW; Zhou JM .Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113) ,ACTA PHYSICA SINICA,1999,48(9):1745-1750 |
| Palavras-Chave | #半导体物理 #SCANNING-TUNNELING-MICROSCOPY #ROOM-TEMPERATURE #GAAS-SURFACES #HIGH-INDEX #GROWTH #INGAAS #SUPERLATTICES #SI(100) #EPITAXY |
| Tipo |
期刊论文 |
