Electronic structure of quantum spheres with wurtzite structure


Autoria(s): Xia JB; Li JB
Data(s)

1999

Resumo

The hole effective-mass Hamiltonian for the semiconductors with wurtzite structure is given. The effective-mass parameters are determined by fitting the valence-band structure near the top with that calculated by the empirical pseudopotential method: The energies and corresponding wave functions are calculated with the obtained effective-mass Hamiltonian for the CdSe quantum spheres, and the energies as functions of sphere radius R are given for the zero spin-orbital coupling (SOC) and finite SOC cases. The energies do not vary as 1/R-2 as the general cases, which is caused by the crystal-field splitting energy and the linear terms in the Hamiltonian. It is found that the ground state is not the optically active S state for the R smaller than 30 Angstrom, in agreement with the experimental results and the "dark exciton'' theory. [S0163-1829(99)01040-1].

Identificador

http://ir.semi.ac.cn/handle/172111/12762

http://www.irgrid.ac.cn/handle/1471x/65351

Idioma(s)

英语

Fonte

Xia JB; Li JB .Electronic structure of quantum spheres with wurtzite structure ,PHYSICAL REVIEW B,1999,60(16):11540-11544

Palavras-Chave #半导体物理 #DOTS
Tipo

期刊论文