Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe
Data(s) |
2000
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Resumo |
A low-temperature Si0.8Ge0.2 (LT-Si0.8Ge0.2) interlayer was grown at 500 degrees C to improve the relaxed Si0.8Ge0.2 surface and reduce the dislocation density in it, which was confirmed by the change of reflective high-energy electron diffraction (RHEED) pattern from spotty to streaky and etch pits counts. For the same extent of strain; the threading dislocation density was reduced from 8 x 10(7) cm(-2) in the latter to 2 x 10(6) cm(-2) in the former. (C) 2000 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM .Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe ,JOURNAL OF CRYSTAL GROWTH,2000,213(3-4):308-311 |
Palavras-Chave | #半导体材料 #SiGe #UHV/CVD #RHEED #Raman scattering #SILICON #RELAXATION |
Tipo |
期刊论文 |