Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer
Data(s) |
2000
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Resumo |
InAs self-organized quantum dots (QDs) grown on annealed low temperature GaAs (LT-GaAs) epi-layer were investigated by transmission electron microscopy (TEM) and photoluminescence (PL) measurement. TEM showed that QDs formed on annealed LT-GaAs epi-layer have a smaller size and a higher density than QDs formed on normal GaAs buffer layer. In addition, the PL spectra analysis showed that the LT-GaAs epi-layer resulted in a blue shift in peak energy, and a narrower linewidth in the PL peak. The differences were attributed to the point defects and As precipitates in annealed LT-GaAs epi-layer for the point defects and As precipitates change the strain field of the surface. The results provide a method to improve the uniformity and change the energy band structure of the QDs by controlling the defects in the LT-GaAs epi-layer. |
Identificador | |
Idioma(s) |
中文 |
Fonte |
Wang XD; Wang H; Wang HL; Niu ZC; Feng SL .Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2000,19(3):177-180 |
Palavras-Chave | #光电子学 #InAs quantum dots #low temperature GaAs #As precipitates #MOLECULAR-BEAM EPITAXY #DEPENDENCE |
Tipo |
期刊论文 |