Application of the compatibility relationship(1) in seeking a functional relationship among species' equilibrium quantities in complex systems


Autoria(s): Ren Y
Data(s)

2000

Resumo

A new algorithm, representing an important advance in determination of the functional relationship, is first reported here. The algorithm is very useful and convenient for analyzing the incorporation of impurities. To show how the algorithm works, two early and well-known vapor phase epitaxy (VPE) experiments-Ashen's (Ashen, D. J.; Dean, P. J.; Hurle, D. T. J.; Mullin, J. B.; Royle, A.; White, A. M. Gallium Arsenide and Related Compounds, Institute of Physics Conference Series 24, 1974; Institute of Physics: London, 1975; p 229.), involving the doping of silicon and DiLorenzo's (DiLorenzo, J. V. J. Cryst. Growth 1972, 17, 189.), involving the mole fraction effect-are calculated to find the functional relationship between the Si contamination and the partial pressure of HCl. The calculated curves agree with the experimental results. A conclusion that the calculated values are greater than the true values has been drawn.

Identificador

http://ir.semi.ac.cn/handle/172111/12388

http://www.irgrid.ac.cn/handle/1471x/65164

Idioma(s)

英语

Fonte

Ren Y .Application of the compatibility relationship(1) in seeking a functional relationship among species' equilibrium quantities in complex systems ,JOURNAL OF PHYSICAL CHEMISTRY B,2000,104(40):9500-9504

Palavras-Chave #半导体化学 #EPITAXIAL LAYERS #SILICON #GAAS
Tipo

期刊论文