Investigation on InGaAs/InAlAs quantum cascade lasers


Autoria(s): Zhang QS; Liu FQ; Zhang YZ; Wang ZG; Gao HH; Krier A
Data(s)

2001

Resumo

The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The device has a reinforced ridge waveguide structure. The threshold current obtained at 80K is about 0. 5A, and the corresponding threshold current density is about 5kA/cm(2).

Identificador

http://ir.semi.ac.cn/handle/172111/12286

http://www.irgrid.ac.cn/handle/1471x/65113

Idioma(s)

中文

Fonte

Zhang QS; Liu FQ; Zhang YZ; Wang ZG; Gao HH; Krier A .Investigation on InGaAs/InAlAs quantum cascade lasers ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2001 ,20(1):41-43

Palavras-Chave #光电子学 #quantum cascade #subband transition #laser
Tipo

期刊论文