Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC


Autoria(s): Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY
Data(s)

2001

Resumo

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/12184

http://www.irgrid.ac.cn/handle/1471x/65062

Idioma(s)

英语

Fonte

Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY .Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC ,JOURNAL OF CRYSTAL GROWTH,2001 ,227(0 ):816-819

Palavras-Chave #半导体材料 #X-ray diffraction #molecular beam epitaxy #semiconducting silicon compounds #LOW-TEMPERATURE GROWTH #FILMS
Tipo

期刊论文