Photoluminescence of Te isoelectronic traps in ZnSeTe/ZnSe quantum wells under hydrostatic pressure


Autoria(s): Fang ZL; Li GH; Han HX; Ding K; Chen Y; Peng CL; Yuan SX
Data(s)

2002

Resumo

The photoluminescence (PL) of ZnSe0.92TeD0.08/ZnSe superlattice quantum wells at 77K under hydrostatic pressure up to 7.8 GPa was studied. Strong PL peaks from excitons trapped in isoelectronic traps in ZnSe0.92Te0.08 were observed. It was found that the pressure coefficients of the PL, peaks from Te traps are about half of that of ZnSe. It demonstrates the localized characteristic of the potential of Te isoelectronic. traps. The excitons transition between Te traps in ZnSe1 Te-- x(x) and (CdSe)(1) /(ZnSe)(3) superlattice was also investigated.

Identificador

http://ir.semi.ac.cn/handle/172111/11974

http://www.irgrid.ac.cn/handle/1471x/64957

Idioma(s)

英语

Fonte

Fang ZL; Li GH; Han HX; Ding K; Chen Y; Peng CL; Yuan SX .Photoluminescence of Te isoelectronic traps in ZnSeTe/ZnSe quantum wells under hydrostatic pressure ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2002,21 (1):28-32

Palavras-Chave #光电子学 #Te isoelectronic traps #pressure #photoluminescence #MOLECULAR-BEAM EPITAXY #ZNSE1-XTEX #ALLOYS #EMISSION #CENTERS #BEHAVIOR
Tipo

期刊论文